Invention Grant
- Patent Title: Vertical fin-type bipolar junction transistor with self-aligned base contact
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Application No.: US16745148Application Date: 2020-01-16
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Publication No.: US11139380B2Publication Date: 2021-10-05
- Inventor: Choonghyun Lee , Seyoung Kim , Injo Ok , Soon-Cheon Seo
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Erik Johnson
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/423 ; H01L29/737 ; H01L21/768 ; H01L29/66 ; H01L29/417 ; H01L29/08 ; H01L29/732 ; H01L29/40 ; H01L29/10
Abstract:
A bipolar junction transistor includes a collector having a first surface on a first level and a second surface on a second level. A base is formed on the second level of the collector, and an emitter is formed on the base. A dielectric liner is formed on vertical sidewalls of the collector, the base and the emitter and over the first surface. A conductive region is formed adjacent to the base in the dielectric liner. A base contact is formed along one of the vertical sidewalls to connect to the base through the conductive region.
Public/Granted literature
- US20200152755A1 VERTICAL FIN-TYPE BIPOLAR JUNCTION TRANSISTOR WITH SELF-ALIGNED BASE CONTACT Public/Granted day:2020-05-14
Information query
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