A UV-LED is disclosed. The UV-LED includes a sapphire substrate, a u-GaN buffer layer formed on the sapphire substrate, an n-GaN contact layer formed on the u-GaN buffer layer, an InGaN light emitting layer formed on the n-GaN contact layer, and a p-GaN layer formed on the InGaN light emitting layer. The UV-LED has a quadrate planar shape with at least one side having a chip size of 50 μm or less.