Invention Grant
- Patent Title: Semiconductor device with conductive shielding structure
-
Application No.: US16676778Application Date: 2019-11-07
-
Publication No.: US11139206B2Publication Date: 2021-10-05
- Inventor: Chen-Hua Yu , Chuei-Tang Wang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/498 ; H01L21/48 ; H01L21/683 ; H01L21/56 ; H01L25/065 ; H01L23/552 ; H01L23/31 ; H01L23/48 ; H01L23/00 ; H01L49/02
Abstract:
A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first conductive structure passing through the substrate. The semiconductor device structure includes a conductive shielding structure passing through the substrate and surrounding the first insulating layer. The semiconductor device structure includes a second insulating layer passing through the substrate and surrounding the conductive shielding structure. The semiconductor device structure includes a second conductive structure passing through the substrate. The semiconductor device structure includes a third insulating layer passing through the substrate and surrounding the second conductive structure. The semiconductor device structure includes a conductive layer passing through the first insulating layer.
Public/Granted literature
- US20200075412A1 SEMICONDUCTOR DEVICE STRUCTURE Public/Granted day:2020-03-05
Information query
IPC分类:
