Invention Grant
- Patent Title: Integrated circuit and system of manufacturing the same
-
Application No.: US16695047Application Date: 2019-11-25
-
Publication No.: US11138361B2Publication Date: 2021-10-05
- Inventor: Yu-Jung Chang , Chin-Chang Hsu , Hsien-Hsin Sean Lee , Wen-Ju Yang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L27/118
- IPC: H01L27/118 ; H01L21/8234 ; H01L21/28 ; H01L27/088 ; H01L29/40 ; H01L29/49 ; H01L27/02 ; G06F30/392

Abstract:
An integrated circuit includes a first and second set of gate structures. A center of each of the first set of gate structures is separated from a center of an adjacent gate of the first set of gate structures in a first direction by a first pitch. A center of each of the second set of gate structures is separated from a center of an adjacent gate of the second set of gate structures in the first direction by the first pitch. The first and second set of gate structures extend in a second direction. A gate of the first set of gate structures is aligned in the second direction with a corresponding gate of the second set of gate structures. The gate of the first set of gate structures is separated from the corresponding gate of second set of gate structures in the second direction by a first distance.
Public/Granted literature
- US20200097630A1 INTEGRATED CIRCUIT AND SYSTEM OF MANUFACTURING THE SAME Public/Granted day:2020-03-26
Information query
IPC分类: