- Patent Title: Integration of graphene and boron nitride hetero-structure device
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Application No.: US16661758Application Date: 2019-10-23
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Publication No.: US11081593B2Publication Date: 2021-08-03
- Inventor: Archana Venugopal , Luigi Colombo
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/66 ; H01L21/02 ; H01L29/20 ; H01L29/267 ; H01L29/49 ; H01L29/45 ; H01L29/16 ; H01L29/778
Abstract:
A microelectronic device includes a gated graphene component. The gated graphene component has a graphitic layer containing one or more layers of graphene. The graphitic layer has a channel region, a first contact region adjacent to the channel region and a second contact region adjacent to the channel region. A patterned hexagonal boron nitride (hBN) layer is disposed on the graphitic layer above the channel region. A gate is located over the patterned hBN layer above the channel region. A first connection is disposed on the graphitic layer in the first contact region, and a second connection is disposed on the graphitic layer in the second contact region. The patterned hBN layer does not extend completely under the first connection or under the second connection. A method of forming the gated graphene component in the microelectronic device is disclosed.
Public/Granted literature
- US20200075779A1 INTEGRATION OF GRAPHENE AND BORON NITRIDE HETERO-STRUCTURE DEVICE Public/Granted day:2020-03-05
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