The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate, a gate stack positioned on the substrate, a plurality of programmable contacts positioned on the gate stack, a pair of heavily-doped regions positioned adjacent to two sides of the gate stack and in the substrate, and a plurality of first contacts positioned on the pair of heavily-doped regions. A width of the plurality of programmable contacts is less than a width of the plurality of first contacts.