A tunnel field-effect transistor has a stacked structure including a second active region, a first active region, and a control electrode. The first active region includes a first-A active region and a first-B active region between the first-A active region and a first active region extension portion. A second active region exists below the first-A active region, and the second active region does not exist below the first-B active region. Where an orthographic projection image of the second active region and an orthographic projection image of the first active region overlap with each other is defined as L2-Total, and a length in a Y direction of the first active region is defined as L1-Y, when an axial direction of the first active region is defined as an X direction, and a stacked direction of the stacked structure is defined as a Z direction, L1-Y