Invention Grant
- Patent Title: Methods for assessing semiconductor structures
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Application No.: US16661702Application Date: 2019-10-23
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Publication No.: US11081407B2Publication Date: 2021-08-03
- Inventor: Igor Rapoport , Srikanth Kommu , Igor Peidous , Gang Wang , Jeffrey L. Libbert
- Applicant: GlobalWafers Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: GlobalWafers Co., Ltd.
- Current Assignee: GlobalWafers Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Armstrong Teasdale LLP
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L23/66 ; G01R31/26 ; H01L27/12
Abstract:
Methods for assessing the quality of a semiconductor structure having a charge trapping layer to, for example, determine if the structure is suitable for use as a radiofrequency device are disclosed. Embodiments of the assessing method may involve measuring an electrostatic parameter at an initial state and at an excited state in which charge carriers are generated.
Public/Granted literature
- US20200058566A1 METHODS FOR ASSESSING SEMICONDUCTOR STRUCTURES Public/Granted day:2020-02-20
Information query
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