A method is provided for producing a microelectronic component on a substrate including in an exposed manner on a first face thereof, an active zone and an electrical isolation zone adjacent thereto, the method including forming a gate on the active zone, forming spacers each configured to cover a surface of a different edge of the gate, and forming source and drain zones by doping portions of the active zone adjacent to the gate, the method successively including forming a first layer of spacer material above the active zone and the electrical isolation zone; an ion implantation to produce doping of the portions through the first layer; removing a modified portion of the first layer disposed overlooking the portions, the modified portion coming from the ion implantation, the removing being configured to preserve at least part of the first layer at a level of edges of the gate.