According to one embodiment, a semiconductor memory device includes a controller configured to execute a read operation. In the read operation, the controller is configured to: apply first and second read voltages to a word line, read data at each of first and second times, apply the first voltage to the source line at each of the first and second times, apply a second voltage to the source line during the application of the first read voltage to the word line and before the first time, and apply a third voltage to the source line during the application of the second read voltage to the word line and before the second time.