Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16456317Application Date: 2019-06-28
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Publication No.: US11079972B2Publication Date: 2021-08-03
- Inventor: Masaru Nagai
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2018-137376 20180723
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F9/54 ; G06F13/42 ; G06F13/32

Abstract:
The memory includes a first descriptor area and a first data area corresponding to the first OS, and a second descriptor area and a second data area corresponding to the second OS. The second processor stores the first transmission instruction information corresponding to the transmission data stored in the second data area in the second descriptor area and transmits a first update notification of the second descriptor area to the first processor. In response to the first update notification, the first processor reads the first transmission instruction information stored in the second descriptor area and stores the first transmission instruction information in the first descriptor area. The communication circuit controlled by the first processor performs transmission process of transmission data stored in the second data area based on the first transmission instruction information stored in the first descriptor area.
Public/Granted literature
- US20200026434A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-01-23
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