Invention Grant
- Patent Title: Apparatus and method for processing a substrate using the same
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Application No.: US16808392Application Date: 2020-03-04
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Publication No.: US11079690B2Publication Date: 2021-08-03
- Inventor: Hyun-Suk Yang , Soo-Hyoung Kim , Sung-Uk Kim , Byung-In Kwon
- Applicant: XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- Applicant Address: CN Qingdao
- Assignee: XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- Current Assignee: XIA TAI XIN SEMICONDUCTOR (QING DAO) LTD.
- Current Assignee Address: CN Qingdao
- Agency: ScienBiziP, P.C.
- Priority: CN202010011091.4 20200106
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
An apparatus for processing the substrate includes a substrate stage and a source. The substrate stage is configured to support a substrate thereon. The substrate stage includes a substrate support formed with a first opening therein. The first opening is an annular opening. The source is coupled to the first opening and is configured to supply first gas/air to a bottom surface of the substrate through the first opening.
Public/Granted literature
- US20210208515A1 APPARATUS AND METHOD FOR PROCESSING A SUBSTRATE USING THE SAME Public/Granted day:2021-07-08
Information query
IPC分类: