Invention Grant
- Patent Title: MOSFET and manufacturing method thereof
-
Application No.: US16547355Application Date: 2019-08-21
-
Publication No.: US11031496B2Publication Date: 2021-06-08
- Inventor: Wei-Ting Lin , Chun-Sheng Chen
- Applicant: Mosel Vitelic Inc.
- Applicant Address: TW Hsinchu
- Assignee: Mosel Vitelic Inc.
- Current Assignee: Mosel Vitelic Inc.
- Current Assignee Address: TW Hsinchu
- Agency: Kirton McConkie
- Agent Evan R. Witt
- Priority: TW108112575 20190410
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/40 ; H01L29/66 ; H01L29/10 ; H01L21/765 ; H01L29/423
Abstract:
A MOSFET includes a substrate, a trench, a bottom oxide, a shield poly, two gate polys and an inter-poly oxide. The trench is formed on the substrate. The bottom oxide is formed on the trench. The shield poly is formed on the trench, and a part of the bottom oxide is separated by the shield poly. The two gate polys are formed on the bottom oxide. The inter-poly oxide is formed between the two gate polys. The shield poly is staggered from at least one of the two gate polys in a horizontal direction and a vertical direction. Therefore, the capacitance between a source electrode and a gate electrode is effectively reduced, and the delay time during switching is shorten and the energy loss is reduced at the same time.
Public/Granted literature
- US20200328302A1 MOSFET AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-10-15
Information query
IPC分类:
