Invention Grant
- Patent Title: Silicon carbide semiconductor device having a gate electrode formed in a trench structure
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Application No.: US16280775Application Date: 2019-02-20
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Publication No.: US11031494B2Publication Date: 2021-06-08
- Inventor: Andreas Meiser
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102018103849.6 20180221
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/765 ; H01L29/10 ; H01L29/40 ; H01L29/423 ; H01L29/47 ; H01L29/739 ; H01L29/66 ; H01L21/04 ; H01L29/16
Abstract:
A semiconductor device includes a trench structure extending from a first surface into a semiconductor body composed of silicon carbide. The trench structure includes an electrode and between the electrode and the first surface a gate electrode. A shielding region adjoining the electrode forms a first pn junction with a drift structure formed in the semiconductor body. A Schottky contact is formed between the drift structure and a first contact structure.
Public/Granted literature
- US20190259870A1 Silicon Carbide Semiconductor Device Having a Gate Electrode Formed in a Trench Structure Public/Granted day:2019-08-22
Information query
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