Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16278023Application Date: 2019-02-15
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Publication No.: US11031474B2Publication Date: 2021-06-08
- Inventor: Yoshiyuki Kondo
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JPJP2018-157063 20180824
- Main IPC: H01L29/167
- IPC: H01L29/167 ; H01L29/66 ; H01L29/78

Abstract:
A semiconductor device is provided with: a substrate; a first region provided above the substrate; a second region provided away from the first region in a first direction; a third region provided between the first region and the second region, the third region facing an electrode portion; a fourth region provided between the first region and the third region; and a fifth region provided between the second region and the third region. The fourth and fifth regions include carbon (C). Carbon concentrations in the first and second regions are lower than carbon concentrations in the fourth and fifth regions.
Public/Granted literature
- US20200066846A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-02-27
Information query
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