Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16846434Application Date: 2020-04-13
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Publication No.: US11031471B2Publication Date: 2021-06-08
- Inventor: Tatsuya Naito
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kanagawa
- Priority: JP2016-203423 20161017,JP2016-244925 20161216,JP2017-099415 20170519,JP2017-154283 20170809
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/10 ; H01L27/06 ; H01L29/06 ; H01L29/40 ; H01L29/423 ; H01L29/08 ; H01L29/78 ; H01L27/07
Abstract:
A semiconductor device is provided, including: a first conductivity-type drift region formed in the semiconductor substrate; a second conductivity-type base region formed between the upper surface of the semiconductor substrate and the drift region; a first conductivity-type accumulation region formed between the drift region and the base region and having a higher doping concentration than the drift region; and a dummy trench portion formed to penetrate the base region from the upper surface of the semiconductor substrate, wherein at least one of the accumulation region and the dummy trench portion has a suppressing structure that suppresses formation of a second conductivity-type inversion layer in a first conductivity-type region adjacent to the dummy trench portion.
Public/Granted literature
- US20200243650A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-07-30
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