A semiconductor device, a manufacturing method thereof, and an electronic device including the same are provided. According to an embodiment, the semiconductor device may include a substrate; a first source/drain region, a channel region and a second source/drain region stacked on the substrate in sequence and contiguous to each other, and a gate stack formed surrounding a periphery of the channel region; wherein spacers are respectively provided between the gate stack and the first source/drain region and between the gate stack and the second source/drain region in a form of surrounding the periphery of the channel region.