Invention Grant
- Patent Title: Germanium nitride layers on semiconductor structures, and methods for forming the same
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Application No.: US16722374Application Date: 2019-12-20
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Publication No.: US11031468B2Publication Date: 2021-06-08
- Inventor: Martin Christopher Holland , Georgios Vellianitis
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L29/78 ; H01L29/16 ; H01L29/51 ; H01L29/423 ; H01L29/775 ; H01L21/02 ; H01L29/10 ; H01L29/66
Abstract:
Provided herein are semiconductor structures that include germanium and have a germanium nitride layer on the surface, as well as methods of forming the same. The described structures include nanowires and fins. Methods of the disclosure include metal-organic chemical vapor deposition with a germanium precursor. The described methods also include using a N2H4 vapor.
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