Invention Grant
- Patent Title: Semiconductor devices including redistribution layers
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Application No.: US16374418Application Date: 2019-04-03
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Publication No.: US11031335B2Publication Date: 2021-06-08
- Inventor: Hirokazu Ato , Koji Yasumori
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/528 ; H01L23/522

Abstract:
Semiconductor devices may include a substrate and a redistribution layer. The redistribution layer may include a dielectric material and electrically conductive material. Vias may extend through the dielectric material. A first region of the electrically conductive material may be connected to a first subset of vias in a row from a first lateral side of the row, the first region occupying more than half of a width of the row on the first lateral side. A second region of the electrically conductive material may be connected to a second subset of vias in the row from a second, opposite lateral side of the row, the second region occupying more than half of the width of the row on the second lateral side.
Public/Granted literature
- US20200321278A1 SEMICONDUCTOR DEVICES INCLUDING REDISTRIBUTION LAYERS Public/Granted day:2020-10-08
Information query
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