- Patent Title: Heat shield for chamber door and devices manufactured using same
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Application No.: US15406143Application Date: 2017-01-13
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Publication No.: US11031252B2Publication Date: 2021-06-08
- Inventor: Meng-Je Chuang , Wan-Chun Kuan , Yi-Wei Chiu , Tzu-Chan Weng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01J37/32 ; H01L21/67 ; H01L21/3065 ; H01L29/66 ; H01L21/8234

Abstract:
A chamber door, such as an etch chamber door may be heated during etch processing to, e.g., prevent etching by-products from adhering to the etch chamber door. Such heating of the etch chamber door, however, can impact the processing parameters and result in non-uniform processing, such as non-uniform etching characteristics across a semiconductor wafer, for instance. An insulator, such as an insulating film covering surfaces of the heated door, can reduce or eliminate transmission of heat from the door to a work piece such as a semiconductor wafer and this reduce or eliminate the non-uniformity of the process results.
Public/Granted literature
- US20180151385A1 Heat Shield for Chamber Door and Devices Manufactured Using Same Public/Granted day:2018-05-31
Information query
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