An EEPROM includes a floating gate transistor having a source region, a channel region and a drain region. A first capa implant zone on a drain-side of the floating gate transistor has a first dopant concentration level. A second capa implant zone in the first capa implant zone adjacent the drain region has a second dopant concentration level that is greater than the first dopant concentration level. A gate oxide region insulates the floating gate electrode from the channel region, first capa implant zone and second capa implant zone. A thickness of the gate oxide region is thinner at the second capa implant zone than at the channel region and first capa implant zone.