Invention Grant
- Patent Title: Particle image velocimetry of extreme ultraviolet lithography systems
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Application No.: US16579660Application Date: 2019-09-23
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Publication No.: US11029324B2Publication Date: 2021-06-08
- Inventor: En Hao Lai , Chi Yang , Shang-Chieh Chien , Li-Jui Chen , Po-Chung Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: G01P5/00
- IPC: G01P5/00 ; H05G2/00 ; G01P5/20 ; G02B27/00
Abstract:
A method includes irradiating a target droplet in an extreme ultraviolet light source of an extreme ultraviolet lithography tool with light from a droplet illumination module. Light reflected and/or scattered by the target droplet is detected. Particle image velocimetry is performed to monitor one or more flow parameters inside the extreme ultraviolet light source.
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