Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16920197Application Date: 2020-07-02
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Publication No.: US11024723B2Publication Date: 2021-06-01
- Inventor: Yao-Sheng Huang , Hung-Chang Sun , I-Ming Chang , Zi-Wei Fang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/02 ; H01L29/78 ; H01L29/08 ; H01L21/311 ; H01L21/306

Abstract:
A semiconductor includes a substrate, a semiconductor fin, an STI structure, a fin sidewall spacer, and a doped silicon layer. The semiconductor fin extends from the substrate. The STI structure laterally surrounds a lower portion of the semiconductor fin. The fin sidewall spacer extends along a middle portion of the semiconductor fin that is above the lower portion of the semiconductor fin. The doped silicon layer wraps around three sides of an upper portion of the semiconductor fin that is above the middle portion of the semiconductor fin.
Public/Granted literature
- US20200335608A1 SEMICONDUCTOR DEVICE Public/Granted day:2020-10-22
Information query
IPC分类: