Invention Grant
- Patent Title: SRAM cell word line structure with reduced RC effects
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Application No.: US16562299Application Date: 2019-09-05
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Publication No.: US11024633B2Publication Date: 2021-06-01
- Inventor: Hidehiro Fujiwara , Wei-Min Chan , Chih-Yu Lin , Yen-Huei Chen , Hung-Jen Liao
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L27/11
- IPC: H01L27/11 ; H01L23/528 ; H01L27/02 ; H01L21/321 ; H01L21/768

Abstract:
A device is disclosed that includes a memory bit cell coupled to a bit line, a word line, a pair of metal islands and a pair of connection metal lines. The word line is electrically coupled to the memory bit cell and is elongated in a first direction. The pair of metal islands are disposed at opposite sides of the word line and are electrically coupled to a power supply. The pair of connection metal lines are elongated in a second direction, and are configured to electrically couple the pair of metal islands to the memory bit cell, respectively. The pair of connection metal lines are separated from the bit line in a layout view. A method of fabricating the device is also provided.
Public/Granted literature
- US20190393228A1 SRAM CELL WORD LINE STRUCTURE WITH REDUCED RC EFFECTS Public/Granted day:2019-12-26
Information query
IPC分类: