Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
-
Application No.: US16583290Application Date: 2019-09-26
-
Publication No.: US11024560B2Publication Date: 2021-06-01
- Inventor: Hsih-Yang Chiu
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: CKC & Partners Co., LLC
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L21/768
Abstract:
A semiconductor structure including a substrate, a dielectric layer, a conductive via, and a landing pad is provided. The dielectric layer is positioned on the substrate. The conductive via penetrates from a lower surface of the substrate to an upper surface of the dielectric layer. The landing pad is embedded in the conductive via.
Public/Granted literature
- US20210098337A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-04-01
Information query
IPC分类:
