- Patent Title: Methods for minimizing sidewall damage during low k etch processes
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Application No.: US16474667Application Date: 2017-12-29
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Publication No.: US11024513B2Publication Date: 2021-06-01
- Inventor: Chih-Yu Hsu , Peng Shen , Nathan Stafford
- Applicant: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges CLuadeq , Air Liquide Electronics U.S. LP
- Applicant Address: FR Paris; US TX Dallas
- Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges CLuadeq,Air Liquide Electronics U.S. LP
- Current Assignee: L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges CLuadeq,Air Liquide Electronics U.S. LP
- Current Assignee Address: FR Paris; US TX Dallas
- Agent Yan Jiang
- International Application: PCT/US2017/069075 WO 20171229
- International Announcement: WO2018/126202 WO 20180705
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/02 ; H01L21/768
Abstract:
Methods for minimizing sidewall damage during low k etch processes are disclosed. The methods etch the low k layers f using the plasma activated vapor of an organofluorine compound having a formula selected from the group consisting of N≡C—R; (N@C—)—(R)—(—C≡N); Rx[-C═N(Rz)]y; and R(3-a)-N—Ha, wherein a=1-2, x=1-2, y=1-2, z=0-1, x+z=1-3, and each R independently has the formula HaFbCc with a=0-11, b=0-11, and c=0-5.
Public/Granted literature
- US20190326126A1 METHODS FOR MINIMIZING SIDEWALL DAMAGE DURING LOW K ETCH PROCESSES Public/Granted day:2019-10-24
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