Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US16940270Application Date: 2020-07-27
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Publication No.: US11024504B2Publication Date: 2021-06-01
- Inventor: Chia-Wei Su , Fu-Ting Yen , Ting-Ting Chen , Teng-Chun Tsai
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L21/3213 ; H01L21/02 ; H01L29/66 ; H01L21/311 ; H01L21/285 ; H01L21/3105 ; H01L21/321 ; H01L21/3205 ; H01L21/32
Abstract:
A semiconductor device includes a substrate, a gate structure over the substrate, gate spacers on opposite sidewalls of the gate structure, an inhibitor residue over gate structure and between the gate spacers, and source/drain structures on opposite sides of the gate structure. The inhibitor residue lines a sidewall of one of the gate spacers.
Information query
IPC分类:
