Invention Grant
- Patent Title: Magnetic shielding structure for MRAM array
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Application No.: US16246925Application Date: 2019-01-14
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Publication No.: US10998489B2Publication Date: 2021-05-04
- Inventor: Franciscus Petrus Widdershoven , Antonius Hendrikus Jozef Kamphuis
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01L27/22

Abstract:
Embodiments are provided for a packaged semiconductor device including: a semiconductor die having an active side and an opposite back side, the semiconductor die including a magnetoresistive random access memory (MRAM) cell array formed within an MRAM area on the active side of the semiconductor die; and a top cover including a soft-magnetic material positioned on the back side of the semiconductor die, wherein the top cover includes a recess formed in a first major surface of the top cover, the first major surface faces the back side of the semiconductor die, and the recess is positioned over the MRAM cell array.
Public/Granted literature
- US20200227624A1 MAGNETIC SHIELDING STRUCTURE FOR MRAM ARRAY Public/Granted day:2020-07-16
Information query
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