Invention Grant
- Patent Title: Self-aligned trench MOSFET structures and methods
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Application No.: US16290834Application Date: 2019-03-01
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Publication No.: US10998438B2Publication Date: 2021-05-04
- Inventor: Hamza Yilmaz
- Applicant: Hamza Yilmaz
- Applicant Address: US CA Gilroy
- Assignee: Hamza Yilmaz
- Current Assignee: Hamza Yilmaz
- Current Assignee Address: US CA Gilroy
- Agent Halit N. Yakupoglu
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/78 ; H01L29/49 ; H01L29/417 ; H01L21/308 ; H01L29/40 ; H01L29/66 ; H01L29/10 ; H01L29/06 ; H01L29/423
Abstract:
A MOSFET device structure is formed on a semiconductor wafer. The structure includes an array of plurality of MOS gate trenches and self-aligned p+ contact trenches that are formed in a p body region. Trench depth of MOS gate trenches are deeper than the self-aligned p+ contact trenches. P doped shield regions are formed under each MOS gate trench.
Public/Granted literature
- US20190273157A1 SELF-ALIGNED TRENCH MOSFET STRUCTURES AND METHODS Public/Granted day:2019-09-05
Information query
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