Invention Grant
- Patent Title: Semiconductor device and method for forming the same
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Application No.: US15852203Application Date: 2017-12-22
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Publication No.: US10998434B2Publication Date: 2021-05-04
- Inventor: Hsin-Chih Lin , Shin-Cheng Lin , Yung-Hao Lin
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: Vanguard International Semiconductor Corporation
- Current Assignee: Vanguard International Semiconductor Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch LLP
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/10 ; H01L29/66 ; H01L29/20 ; H01L29/423 ; H01L29/205
Abstract:
A semiconductor device is provided. The semiconductor device includes a substrate, a first III-V compound layer disposed on the substrate, a second III-V compound layer disposed on the first III-V compound layer, a p-type doped III-V compound layer disposed on the second III-V compound layer, a gate disposed over the p-type doped III-V compound layer, a source and a drain disposed on opposite sides of the gate, and a dielectric layer disposed between the p-type doped III-V compound layer and the gate. A method for forming the above semiconductor device is also provided.
Public/Granted literature
- US20190198654A1 SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME Public/Granted day:2019-06-27
Information query
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