Invention Grant
- Patent Title: FinFET structure and method for fabricating the same
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Application No.: US16215831Application Date: 2018-12-11
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Publication No.: US10998425B2Publication Date: 2021-05-04
- Inventor: Kuo-Cheng Chiang , Guan-Lin Chen , Chao-Hsiung Wang , Chi-Wen Liu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L21/02 ; H01L21/306

Abstract:
A device includes a fin structure protruding over a substrate, wherein the fin structure comprises a plurality of portions formed of different materials, a first carbon doped layer formed between two adjacent portions of the plurality of portions, a second carbon doped layer formed underlying a first source/drain region and a third carbon doped layer formed underlying a second source/drain region.
Public/Granted literature
- US20190123177A1 FinFET Structure and Method for Fabricating the Same Public/Granted day:2019-04-25
Information query
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