Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US16409358Application Date: 2019-05-10
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Publication No.: US10998408B2Publication Date: 2021-05-04
- Inventor: Tadashi Yamaguchi
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2018-096243 20180518
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/51 ; H01L21/28 ; H01L27/11587 ; G11C11/22 ; H01L27/1159
Abstract:
A first amorphous film containing hafnium, oxygen and a first element such as zirconium is formed, a plurality of grains containing a second element different from any of hafnium, oxygen and the first element are formed on the first amorphous film, a second amorphous film made of the same material as the first amorphous film is formed on the plurality of grains and on the first amorphous film, and a metal film is formed on the second amorphous film. Thereafter, by performing heat treatment, the first amorphous film is crystallized to form a first orthorhombic ferroelectric film and the second amorphous film is crystallized to form a second orthorhombic ferroelectric film.
Public/Granted literature
- US20190355584A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-11-21
Information query
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