A semiconductor device includes a plurality of broad buffer layers provided in a drift layer. Each of the plurality of the broad buffer layers has an impurity concentration exceeding that of a portion of the drift layer excluding the broad buffer layers, and has a mountain-shaped impurity concentration distribution in which a local maximum value is less than the impurity concentration of an anode layer and a cathode layer. The plurality of broad buffer layers are disposed at different depths from a first main surface of the drift layer, respectively, the number of broad buffer layers close to the first main surface from the intermediate position of the drift layer is at least one, and number of broad buffer layers close to a second main surface of the drift layer from the intermediate position of the drift layer is at least two. The broad buffer layer includes a hydrogen-related donor.