Invention Grant
- Patent Title: Source/drain regions in fin field effect transistors (finFETs) and methods of forming same
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Application No.: US16720920Application Date: 2019-12-19
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Publication No.: US10998313B2Publication Date: 2021-05-04
- Inventor: Che-Cheng Chang , Chih-Han Lin , Horng-Huei Tseng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/78 ; H01L21/8234 ; H01L21/306 ; H01L29/06 ; H01L29/08 ; H01L29/66 ; H01L21/8238 ; H01L29/165
Abstract:
An embodiment method includes forming first dummy gate stack and a second dummy gate stack over a semiconductor fin. A portion of the semiconductor fin is exposed by an opening between the first dummy gate stack and the second dummy gate stack. The method further includes etching the portion of the semiconductor fin to extend the opening into the semiconductor fin. A material of the semiconductor fin encircles the opening in a top-down view of the semiconductor fin. The method further includes epitaxially growing a source/drain region in the opening on the portion of the semiconductor fin.
Information query
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