Invention Grant
- Patent Title: Semiconductor unit, semiconductor module, and semiconductor device having terminal region extending in parallel to the transistors
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Application No.: US16566579Application Date: 2019-09-10
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Publication No.: US10998309B2Publication Date: 2021-05-04
- Inventor: Masashi Hoya , Katsumi Taniguchi , Naoyuki Kanai
- Applicant: Fuji Electric Co., Ltd.
- Applicant Address: JP Kanagawa
- Assignee: Fuji Electric Co., Ltd.
- Current Assignee: Fuji Electric Co., Ltd.
- Current Assignee Address: JP Kanagawa
- Agency: Chen Yoshimura LLP
- Priority: JPJP2018-173060 20180914
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L27/06 ; H01L23/31 ; H01L23/522

Abstract:
A semiconductor unit includes: a plurality of transistor chips arranged in a plurality of parallel rows, each transistor chip respectively having a first main electrode on one surface and a second main electrode on another surface; a first conductor layer electrically connected to the first main electrodes of the transistor chips, both corner portions on one end of the first conductor layer being drawn out in a direction in which the rows of transistor chips run; a second conductor layer arranged between the both corner portions of the first conductor layer; and a wiring substrate that is arranged on a side of the second main electrodes of the plurality of transistor chips and includes a wiring layer electrically connected to the second main electrodes of the plurality of transistor chips and to the second conductor layer.
Public/Granted literature
- US20200091140A1 SEMICONDUCTOR UNIT, SEMICONDUCTOR MODULE, AND SEMICONDUCTOR DEVICE Public/Granted day:2020-03-19
Information query
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