Invention Grant
- Patent Title: Guard ring method for semiconductor devices
-
Application No.: US16443663Application Date: 2019-06-17
-
Publication No.: US10998277B2Publication Date: 2021-05-04
- Inventor: Hsien-Wei Chen , Chung-Ying Yang
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L23/528 ; H01L23/00 ; H01L23/31

Abstract:
A customized seal ring for a semiconductor device is formed of multiple seal ring cells that are selected and arranged to produce a seal ring design. The cells include first cells that are coupled to ground and second cells that are not coupled to ground. The second cells that are not coupled to ground, include a higher density of metal features in an inner portion thereof, than the first seal ring cells. Dummy metal vias and other metal features that may be present in the inner portion of the second seal ring cells are absent from the inner portion of the first seal ring cells that are coupled to ground. The seal ring design may include various arrangements, including alternating and repeating sequences of the different seal ring cells.
Public/Granted literature
- US20190304932A1 GUARD RING METHOD FOR SEMICONDUCTOR DEVICES Public/Granted day:2019-10-03
Information query
IPC分类: