Invention Grant
- Patent Title: High voltage semiconductor device lead frame and method of fabrication
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Application No.: US16533566Application Date: 2019-08-06
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Publication No.: US10998256B2Publication Date: 2021-05-04
- Inventor: Enis Tuncer
- Applicant: TEXAS INSTRUMENTS INCORPORATED
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Dawn Jos; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/00 ; H01L23/31 ; H01L21/48 ; H01L25/00 ; H01L25/065
Abstract:
An apparatus includes a first die attach pad and a second die attach pad. A first die is attached to the first die attach pad and a second die is attached to the second die attach pad. The first die attach pad and the second die attach pad are separated by a gap. A first edge of the first die attach pad adjacent to the gap is thinner than a second edge of the first die attach pad. The first edge of the first die attach pad is opposite the second edge of the first die attach pad. A first edge of the second die attach pad adjacent to the gap is thinner than a second edge of the second die attach pad. The first edge of the second die attach pad is opposite the second edge of the second die attach pad.
Public/Granted literature
- US20200211940A1 HIGH VOLTAGE SEMICONDUCTOR DEVICE LEAD FRAME AND METHOD OF FABRICATION Public/Granted day:2020-07-02
Information query
IPC分类:
