Invention Grant
- Patent Title: Method for increasing semiconductor device wafer strength
-
Application No.: US16440675Application Date: 2019-06-13
-
Publication No.: US10998231B2Publication Date: 2021-05-04
- Inventor: Colby Greg Rampley , Alan J. Magnus , Jason R. Wright , Jeffrey Lynn Weibrecht , Elijah Blue Foster
- Applicant: NXP USA, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Agent Charlene R. Jacobsen
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L23/58 ; H01L21/683 ; H01L23/00
Abstract:
A device wafer is provided that includes a substrate having major and minor surfaces, and a plurality of active devices located at the major surface. A eutectic alloy composition is formed at the minor surface of the substrate. The eutectic alloy composition is removed from the minor surface of the substrate such that a portion of the eutectic alloy composition remains at an outer perimeter of the minor surface to strengthen the outer perimeter of the substrate. A bonding layer is deposited over the minor surface and over the portion of the eutectic alloy composition at the outer perimeter of the minor surface. The bonding layer is utilized for joining semiconductor components of the device wafer to secondary structures. Additional eutectic alloy composition may remain on the minor surface of the substrate at the streets to strengthen the substrate during device wafer separation.
Information query
IPC分类:
