Invention Grant
- Patent Title: Substrate processing apparatus and manufacturing method of semiconductor device
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Application No.: US16570753Application Date: 2019-09-13
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Publication No.: US10998205B2Publication Date: 2021-05-04
- Inventor: Tomoyasu Miyashita , Daigi Kamimura , Atsushi Umekawa
- Applicant: KOKUSAI ELECTRIC CORPORATION
- Applicant Address: JP Tokyo
- Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee: KOKUSAI ELECTRIC CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Volpe Koenig
- Priority: JPJP2018-172788 20180914,JPJP2019-110038 20190613
- Main IPC: H01L21/67
- IPC: H01L21/67 ; C23C16/02 ; C23C16/34 ; H01L21/26 ; C23C16/44 ; H01L21/285

Abstract:
A substrate processing a technology including: a substrate holder; a tubular reactor that houses the substrate holder; an inlet flange connected to the tubular reactor including a plurality of gas introduction ports; a lid that closes a lower opening of the inlet flange in a manner such that the substrate holder can be carried in and out; heater elements disposed along the outer peripheral surface of the inlet flange while avoiding the gas introduction ports; temperature sensors thermally coupled to the inlet flange or any heater element and adapted to detect temperatures; and a temperature controller that divides of the heater elements into groups and controls power supply to the respective heater elements independently for each of the groups based on temperatures detection temperatures detected by the temperature sensors.
Public/Granted literature
- US20200090965A1 SUBSTRATE PROCESSING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2020-03-19
Information query
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