Invention Grant
- Patent Title: Ion detector
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Application No.: US16281398Application Date: 2019-02-21
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Publication No.: US10998176B2Publication Date: 2021-05-04
- Inventor: Hiroshi Kobayashi , Takeshi Endo , Hiroki Moriya , Toshinari Mochizuki
- Applicant: HAMAMATSU PHOTONICS K.K.
- Applicant Address: JP Hamamatsu
- Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee: HAMAMATSU PHOTONICS K.K.
- Current Assignee Address: JP Hamamatsu
- Agency: Faegre Drinker Biddle & Reath LLP
- Priority: JPJP2018-029757 20180222
- Main IPC: H01J49/00
- IPC: H01J49/00 ; H01J49/02 ; H01J49/26

Abstract:
The present embodiment relates to an ion detector provided with a structure for suppressing degradation over time in an electron multiplication mechanism in a multi-mode ion detector. The ion detector includes a dynode unit, a first electron detection portion including a semiconductor detector having an electron multiplication function, a second electron detection portion including an electrode, and a gate part. The first and second electron detection portions are capable of ion detection at different multiplication factors. The gate part includes at least a final-stage dynode as a gate electrode, and controls switching between passage and interruption of secondary electrons which are directed toward the first electron detection portion by adjusting a set potential of the gate electrode.
Public/Granted literature
- US20190259594A1 ION DETECTOR Public/Granted day:2019-08-22
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