Invention Grant
- Patent Title: Plasma source and semiconductor processing apparatus
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Application No.: US16261389Application Date: 2019-01-29
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Publication No.: US10998171B2Publication Date: 2021-05-04
- Inventor: Baolin Sun
- Applicant: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD
- Applicant Address: CN Beijing
- Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD
- Current Assignee: BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD
- Current Assignee Address: CN Beijing
- Agency: Anova Law Group, PLLC
- Priority: CN201610635952.X 20160802
- Main IPC: H01J37/32
- IPC: H01J37/32 ; H01L21/67

Abstract:
A plasma source includes a dielectric cylinder, a coil sounding a circumference of the dielectric cylinder, and coil case encasing the coil. The coil case has a first gas inlet disposed at a bottom area of a sidewall of the coil case for introducing a cooling gas to the coil case. The coil case has a first gas outlet disposed at a top wall of the coil case for venting the cooling gas from the coil case.
Public/Granted literature
- US20190180983A1 PLASMA SOURCE AND SEMICONDUCTOR PROCESSING APPARATUS Public/Granted day:2019-06-13
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