- Patent Title: Spin transfer torque device with oxide layer beneath the seed layer
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Application No.: US16572551Application Date: 2019-09-16
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Publication No.: US10997992B2Publication Date: 2021-05-04
- Inventor: James Mac Freitag , Susumu Okamura , Masahiko Hashimoto , Zheng Gao
- Applicant: Western Digital Technologies, Inc.
- Applicant Address: US CA San Jose
- Assignee: Western Digital Technologies, Inc.
- Current Assignee: Western Digital Technologies, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Patterson & Sheridan, LLP
- Agent Steven H. Versteeg
- Main IPC: G11B5/31
- IPC: G11B5/31 ; G11B5/39 ; G11B5/60 ; G11B5/127 ; G11B5/23

Abstract:
A spin transfer torque (STT) device is formed on an electrically conductive substrate and includes a ferromagnetic free layer near the substrate, a ferromagnetic polarizing layer and a nonmagnetic spacer layer between the free layer and the polarizing layer. A multilayer structure is located between the substrate and the free layer. The multilayer structure includes a metal or metal alloy seed layer for the free layer and an intermediate oxide layer below and in contact with the seed layer. The intermediate oxide layer reflects spin current from the free layer and thus reduces undesirable damping of the oscillation of the free layer's magnetization by the seed layer.
Public/Granted literature
- US20200013429A1 SPIN TRANSFER TORQUE DEVICE WITH OXIDE LAYER BENEATH THE SEED LAYER Public/Granted day:2020-01-09
Information query
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