Error recovery operations are provided for a memory system. The memory system includes a memory device including a plurality of cells and a controller. The controller performs a read on a select cell among the plurality of cells. The controller adjusts a log-likelihood ratio (LLR) value on the select cell to generate an adjusted LLR value, based on first read data on the select cell and second read data on at least one neighbor cell adjacent to the select cell, when the read on the select cell fails.