Invention Grant
- Patent Title: Switched capacitor biasing circuit
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Application No.: US16405309Application Date: 2019-05-07
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Publication No.: US10996697B2Publication Date: 2021-05-04
- Inventor: Erdogan Ozgur Ates
- Applicant: Qorvo International Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: Qorvo International Pte. Ltd.
- Current Assignee: Qorvo International Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Withrow & Terranova, P.L.L.C.
- Main IPC: G05F3/02
- IPC: G05F3/02 ; G05F1/56 ; G05F3/24 ; H03K3/03

Abstract:
Bias circuit and a bias generator circuit comprising such a bias circuit. The bias circuit (10, 11) comprises a switched capacitor resistor circuitry (C1, C2, M12-M17), and an operational amplifier (M1-M4, M10) with an input differential transistor pair (M1, M2). The bias circuit further comprises additional source follower transistors (M5, M6) associated with the first and second input differential transistors (M1, M2). The bias generator circuit has a PMOS switched capacitor reference circuit (11) and a NMOS switched capacitor reference circuit (10) and a transconductor reference cell (15). The transconductor reference cell (15) is a replica of a basic reference cell used in a further circuit.
Public/Granted literature
- US20190258281A1 SWITCHED CAPACITOR BIASING CIRCUIT Public/Granted day:2019-08-22
Information query
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