Invention Grant
- Patent Title: Reliability determination method
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Application No.: US16398883Application Date: 2019-04-30
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Publication No.: US10996262B2Publication Date: 2021-05-04
- Inventor: Sheng-Hui Liang , Huang-Lang Pai , Chia-Ming Hsu , Chia-Lin Chen
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: Vanguard International Semiconductor Corporation
- Current Assignee: Vanguard International Semiconductor Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch LLP
- Main IPC: G01R31/26
- IPC: G01R31/26 ; H01L21/00 ; G05B1/00

Abstract:
A reliability determination method, which is configured to test a batch of semiconductor devices, includes: obtaining a Welbull distribution of lifetime of the batch of semiconductor devices; dividing the Welbull distribution into at least a first section and a second section, wherein the first section and the second section meet a confidence interval; generating a first trend line of the first section and a second trend line of the second section according to the first confidence level, in which the first trend line has a first slope and the second trend line has a second slope; determining the first slope exceeds a second slope; and determining a predicted reliability of the batch of the semiconductor device under a target quality level according to the first section.
Public/Granted literature
- US20200348355A1 RELIABILITY DETERMINATION METHOD Public/Granted day:2020-11-05
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