Invention Grant
- Patent Title: Crystals for detecting neutrons, gamma rays, and X rays and preparation methods thereof
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Application No.: US16903322Application Date: 2020-06-16
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Publication No.: US10995102B2Publication Date: 2021-05-04
- Inventor: Yu Wang , Weiming Guan , Min Li
- Applicant: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Applicant Address: CN Sichuan
- Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Current Assignee: MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Current Assignee Address: CN Sichuan
- Agency: Metis IP LLC
- Main IPC: C07F5/00
- IPC: C07F5/00 ; C30B15/00 ; G01T3/06 ; G01T1/202 ; C30B29/22

Abstract:
The present disclosure discloses a method for growing a crystal for detecting neutrons, gamma rays, and/or x rays. The method may include weighting reactants based on a molar ratio of the reactants according to a reaction equation (1-x-z)X2O3+SiO2+2xCeO2+zZ2O3→X2(1-x-z)Ce2xZ2zSiO5+x/2O2↑ or (1-x-y-z)X2O3+yY2O3+SiO2+2xCeO2+zZ2O3→X2(1-x-y-z)Y2yCe2xZ2zSiO5+x/2O2↑; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device after an assembly processing operation is performed on at least one component of the crystal growth device; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to grow the crystal based on the Czochralski technique.
Public/Granted literature
- US20210053993A1 CRYSTALS FOR DETECTING NEUTRONS, GAMMA RAYS, AND X RAYS AND PREPARATION METHODS THEREOF Public/Granted day:2021-02-25
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