Invention Grant
- Patent Title: Method of forming a semiconductor device
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Application No.: US16867269Application Date: 2020-05-05
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Publication No.: US10971788B1Publication Date: 2021-04-06
- Inventor: Gareth Pryce Weale
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Robert F. Hightower
- Main IPC: H01P1/18
- IPC: H01P1/18 ; H01P9/00 ; H01P11/00

Abstract:
In an embodiment, a method of forming a delay line circuit may include forming a first ferro-electric material between a first conductor and a second conductor wherein the first conductor and the second conductor have a first resistivity. The first conductor may be configured to receive a d.c. bias signal. An embodiment may include forming a third conductor overlying the second conductor, the third conductor having a second resistivity that is less than the first resistivity, the third conductor connected to the second conductor at least at a plurality of points along a length of the third conductor. The third conductor may be configured to receive an RF signal and conduct the RF signal along the length of the third conductor.
Information query