Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
-
Application No.: US16357567Application Date: 2019-03-19
-
Publication No.: US10971623B2Publication Date: 2021-04-06
- Inventor: Takuo Kikuchi
- Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Applicant Address: JP Minato-ku; JP Minato-ku
- Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee: KABUSHIKI KAISHA TOSHIBA,TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION
- Current Assignee Address: JP Minato-ku; JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2018-169710 20180911
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L29/66
Abstract:
A semiconductor device includes a semiconductor body, first and second electrodes and a control electrode. The semiconductor body is positioned between the first and second electrodes. The control electrode is provided between the semiconductor body and the first electrode. The semiconductor body includes a first layer of a first conductivity-type and a second layer of a second conductivity-type alternately arranged along the first electrode. The first and second layers include first and second low-concentration portions, respectively. The first low-concentration portion has a first conductivity-type impurity concentration lower than that in other portion of the first layer. The second low-concentration portion has a second conductivity-type impurity concentration lower than that in other portion of the second layer. The first low-concentration portion is positioned at a level same as a level of the second low-concentration portion in a direction directed toward the first electrode from the second electrode.
Public/Granted literature
- US20200083372A1 SEMICODUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2020-03-12
Information query
IPC分类:
