Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16557435Application Date: 2019-08-30
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Publication No.: US10971608B2Publication Date: 2021-04-06
- Inventor: Koichi Nishi
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2018-209504 20181107
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/40 ; H01L29/423
Abstract:
A semiconductor substrate has a first surface and a second surface provided with an opening of a trench. A first-conductivity-type carrier storage layer is provided on the second surface side of a first-conductivity-type drift layer. A second-conductivity-type base layer is provided on the second surface side of the carrier storage layer and reaches the second surface. A first-conductivity-type impurity layer is provided on the second surface side of the base layer. A trench electrode is provided in the trench via an internal insulating film. The internal insulating film has a first thickness at a portion facing the base layer, has a second thickness at a portion facing the drift layer, and has the first thickness and the second thickness at a portion facing the carrier storage layer. The second thickness is thicker than the first thickness.
Information query
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