The thin-film transistor substrate of the present invention includes a gate line; a data line; one or more thin-film transistors; and a stack disposed on the insulating substrate and sequentially including a first line layer, a second line layer, and a third line layer, at least one of the thin-film transistors being connected to the gate line and the data line, at least one of the thin-film transistors including a lower layer gate electrode disposed in the first line layer, and an upper layer gate electrode disposed in the second line layer, the gate line being disposed in the first line layer, the data line including a lower layer data line disposed in the second line layer and an upper layer data line disposed in the third line layer, the gate line intersecting at least one of the lower layer data line or the upper layer data line.